Semiconductor device and a method of manufacturing the same

ABSTRACT

A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n + -type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.

CROSS-REFERENCE TO RELATED APPLICATIONS

The disclosure of Japanese Patent Application No. 2006-103463 filed onApr. 4, 2006 including the specification, drawings and abstract isincorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device and amanufacturing technique for the same. Particularly, the presentinvention is concerned with a technique applicable effectively to asemiconductor device having a non-volatile memory and a method ofmanufacturing the same.

Electrically erasable programmable non-volatile memories such as EEPROM(Electrically Erasable Programmable Read Only Memory) and flash memorypermit onboard rewriting of programs, thus permitting shortening of thedevelopment period and improvement of the development efficiency.Therefore, the application thereof is spreading to various uses,including the use in multifarious small-lot production, tuning bydestinations, and program updating after shipping.

As an electrically erasable programmable non-volatile memory theremainly is used EEPROM using the ordinary polysilicon as a floatingelectrode. Recently, attention has been paid to an MNOS (Metal NitrideOxide Semiconductor) structure using a nitride film (silicon nitride(e.g. Si₃N₄)) as a charge storage layer or an MONOS (Metal Oxide NitrideOxide Semiconductor) structure. In this case, the electric charge whichcontributes to the storage of data is accumulated in a discrete trap ofa nitride film which is an insulator, so that even if there occurs adefect in any part of an oxide film which surrounds an accumulationnode, with consequent occurrence of abnormal leakage, there is no fearof complete removal of the electric charge on the charge storage layer.Thus, it is possible to improve the data holding reliability.

In connection with the configuration of a memory cell there has beenproposed a memory cell of a single transistor structure. As awrite/erase method there has been proposed not only a method whereinwrite is performed by full surface FN (Fowler Nordheim) tunnelinginjection from a semiconductor substrate and erasing is performed by FNtunneling current to the semiconductor substrate, but also a methodwherein erasing is performed by FN tunneling current to a semiconductorsubstrate or to the source and drain regions. Further, in the case of aMONOS type single transistor cell structure, it is apt to be influencedby disturb in comparison with the EEPROM cell structure. In view of thispoint there also has been proposed a split gate type memory cellstructure of a two-transistor configuration provided with a control gateelectrode.

As to the split gate type memory cell of such a two-transistorconfiguration, a description is found in for example Japanese patentlaid-open No. 2004-266203 (see Patent Literature 1). In PatentLiterature 1 is disclosed a non-volatile memory cell configurationhaving a first electrode formed on a semiconductor substrate via a gateinsulating film for charge storage, a second gate electrode formed onthe semiconductor substrate via a gate insulating film in adjacency tothe first gate electrode, and semiconductor regions for source and drainformed on both-side semiconductor substrate portions in the direction ofarrangement of the first and second gate electrodes.

Moreover, for example in Japanese patent laid-open No. 2002-198523 (seePatent Literature 2) there is disclosed a technique of formingsemiconductor regions for source and drain using as a mask a first sidewall formed on a side wall of a gate electrode of MISFET, then forming asecond side wall on a side wall of the first side wall and, using thesecond side wall as a mask, forming a silicide layer on each of thesemiconductor regions for source and drain.

Further, for example in paragraphs [0050] and [0051] of Japanese patentlaid-open No. 2004-079893 (see Patent Literature 3) there is disclosed atechnique wherein, at the time of forming a side wall on a side face ofa gate electrode, a pattern of an insulating film permitting exposure ofa contact region of a polysilicon resistor is formed on the polysiliconresistor with use of an insulating film for forming the side wall.

[Patent Literature 1]

Japanese patent laid-open No. 2004-266203

[Patent Literature 2]

Japanese patent laid-open No. 2002-198523

[Patent Literature 3]

Japanese patent laid-open No. 2004-079893 (paragraphs [0050] and [0051])

SUMMARY OF THE INVENTION

However, the semiconductor device having a non-volatile memory involvesthe problem that a threshold value of a bit in an erased state increasescontrary to intention, that is, a so-called disturb defect (erroneouswrite after erasing operation) is apt to occur.

Having studied the aforesaid disturb defect, the present inventors foundout that the leakage current occurring in the non-volatile memory cellcontributes markedly to a disturb defect. More on this will be describedbelow.

In the non-volatile memory cell which the present inventors havestudied, a memory gate electrode is formed on a main surface of asemiconductor substrate via an insulating film for charge storage and aside wall is formed on one side face of the memory gate electrode. Asemiconductor region on a low concentration side for source is formed onthe main-surface of the semiconductor substrate self-alignmentwise forthe one side face of the memory gate electrode. Also, a semiconductorregion on a high concentration side for source is formed on the mainsurface of the semiconductor substrate self-alginmentwise for the sideface of the aforesaid side wall so as to be coupled electrically to thelow concentration-side semiconductor region for source. Further, asilicide layer is formed on the high concentration-side semiconductorregion.

According to this configuration, since the memory gate electrode-sideend portion of the silicide layer is formed self-alignmentwise to theside face of the side wall, it becomes close to a junction surface ofthe high concentration-side semiconductor region for source.Particularly, according to a study made by the present inventors, whenforming the side wall on the side face of the memory gate electrode, themain surface of the semiconductor substrate on the source side issomewhat shaved and depressed, but since a silicide layer is formed onthe depressed surface, the memory gate electrode-side end portion of thesilicide layer becomes closer to the junction surface of the highconcentration-side semiconductor region for source.

Consequently, a leakage current is apt to flow downwards of the lowconcentration-side semiconductor region for source from the end portionof the silicide layer. It turned out that with this leakage current, hotelectrons were produced in the semiconductor substrate portion locatedbelow the insulating film for charge storage and injected into the sameinsulating film, thus resulting in increase of the threshold value ofthe non-volatile memory contrary to intention.

Accordingly, it is an object of the present invention to provide atechnique able to diminish or prevent a disturb defect of asemiconductor device having a non-volatile memory.

The above and other objects and novel features of the present inventionwill become apparent from the following description and the accompanyingdrawings.

The following is a brief description of a typical mode of the presentinvention as disclosed herein.

According to the present invention there is provided a non-volatilememory having a gate electrode over a main surface of a semiconductorsubstrate via an insulating film for charge storage, the non-volatilememory comprising a first insulating film formed over a side face of thegate electrode, semiconductor regions for source and drain formed overthe semiconductor substrate self-alignmentwise for side faces of thefirst insulating film, a second insulating film formed over a side faceof the first insulating film, and silicide layers formed over thesemiconductor regions for source and drain.

The following is a brief description of an effect obtained by thetypical mode of the present invention as disclosed herein.

In the non-volatile memory cell according to the present inventionhaving a gate electrode formed over the main surface of thesemiconductor substrate via an insulating film for charge storage, sincea silicide layer can be formed over a side face of the gate electrode ata position spaced a distance corresponding to the thickness of thesecond insulating film away from a side face of the first insulatingfilm, it is possible to diminish or prevent a disturb defect of asemiconductor device having the non-volatile memory.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a non-volatile memory cell which thepresent inventors have studied;

FIG. 2 is an enlarged sectional view of a principal portion of thememory cell shown in FIG. 1;

FIG. 3 is a circuit diagram of a memory cell in a semiconductor devicehaving a non-volatile memory according to an embodiment of the presentinvention;

FIG. 4 is a sectional view of a basic device configuration of the memorycell shown in FIG. 3;

FIG. 5 is an enlarged sectional view of a principal portion of thememory cell shown in FIG. 4;

FIG. 6 is an enlarged sectional view of a principal portion of thememory cell shown in FIG. 4;

FIG. 7 is a graph showing a threshold voltage distribution within asemiconductor chip in a comparative manner between before taking ameasure against a disturb defect and after taking the measure;

FIG. 8 is a sectional view of principal portions during manufacture ofthe semiconductor device having the non-volatile memory embodying thepresent invention;

FIG. 9 is a sectional view of principal portions during manufacture ofthe semiconductor device which follows FIG. 8;

FIG. 10 is a sectional view of principal portions during manufacture ofthe semiconductor device which follows FIG. 9;

FIG. 11 is a sectional view of principal portions during manufacture ofthe semiconductor device which follows FIG. 10;

FIG. 12 is an enlarged sectional view of a memory region shown in FIG.11;

FIG. 13 is an enlarged sectional view of a peripheral circuit regionshown in FIG. 11;

FIG. 14 is an enlarged sectional view of a resistor region shown in FIG.11;

FIG. 15 is a sectional view of principal portions during manufacture ofthe semiconductor device which follows FIG. 11;

FIG. 16 is a sectional view of principal portions during manufacture ofthe semiconductor device which follows FIG. 15;

FIG. 17 is a sectional view of principal portions during manufacture ofthe semiconductor device which follows FIG. 16;

FIG. 18 is an enlarged sectional view of a memory region shown in FIG.17;

FIG. 19 is an enlarged sectional view of a peripheral circuit regionshown in FIG. 17;

FIG. 20 is an enlarged sectional view of a resistor region shown in FIG.17;

FIG. 21 is a sectional view of principal portions during manufacture ofthe semiconductor device which follows FIG. 17;

FIG. 22 is an enlarged sectional view of a memory region shown in FIG.21;

FIG. 23 is an enlarged sectional view of a peripheral circuit regionshown in FIG. 21;

FIG. 24 is an enlarged sectional view of a resistor region shown in FIG.21; and

FIG. 25 is a sectional view of principal portions during manufacture ofthe semiconductor device which follows FIG. 21.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Where required for convenience' sake, the following embodiment will bedescribed in a divided manner into plural sections or embodiments, butunless otherwise mentioned, they are not unrelated to each other, butare in a relation such that one is a modification, a description ofdetails, or a supplementary explanation, of part or the whole of theother. In the following embodiment, when reference is made to the numberof elements (including the number, numerical value, quantity, andrange), no limitation is made to the number referred to, but numeralsabove and below the number referred to will do as well unless otherwisementioned and except the case where it is basically evident thatlimitation is made to the number referred to. In the followingembodiment, it goes without saying that their components (includingconstituent steps) are not always essential unless otherwise mentionedand except the case where they are considered essential basicallyclearly. Likewise, in the following embodiment, it is to be understoodthat when reference is made to the shape and positional relation of acomponent, those substantially similar or closely similar thereto arealso included unless otherwise mentioned and except the case where theanswer is negative basically clearly. This is also true of the foregoingnumerical value and range. In all of the drawings for illustrating theembodiment, portions having the same functions are identified by likereference numerals, and repeated explanations will be omitted wherepossible. The embodiment of the present invention will be describedhereinunder with reference to the accompanying drawings.

First Embodiment

A description will be given first about problems which the presentinventors found out for the first time.

The semiconductor device which the present inventors have studied is asemiconductor device having a non-volatile memory such EEPROM or flashmemory. Each of plural memory cells which constitute the non-volatilememory is formed as a split gate type memory cell of a two-transistorconfiguration for example. One of the two transistors is a transistor ofMONOS (Metal Oxide Nitride Oxide Semiconductor) structure having anitride film (e.g., silicon nitride film) as a charge storage layer forthe storage of data. In the MONOS structure, since a single transistorstructure is apt to be influenced by deplete, there is adopted a splitgate type memory cell of a two-transistor configuration in order toavoid such influence.

FIG. 1 is a sectional view of a non-volatile memory cell MC which thepresent inventors have studied and FIG. 2 is an enlarged sectional viewof a principal portion of the memory cell MC.

A semiconductor substrate 1S is formed of a p-type silicon singlecrystal for example and a split gate type memory cell MC of anon-volatile memory is disposed over a main surface (device-formingsurface) of the semiconductor substrate 1S. The memory cell MC has twogate electrodes which are a memory gate electrode (first gate electrode)MG and a control gate-electrode (second gate electrode) CG.

The memory gate electrode MG is constituted by polycrystalline siliconof a low resistance for example and is formed on the main surface of thesemiconductor substrate 1S via an insulating film 2 for charge storage.The insulating film 2 for charge storage is a portion corresponding tothe foregoing charge storage layer and is formed by stacking for examplethree insulating films 2 a, 2 b and 2 c in this order. Outsideinsulating films 2 a and 2 c are formed by silicon oxide (e.g., SiO₂)for example. The insulating film 2 b sandwiched in between the twoinsulating films 2 a and 2 c is formed by silicon nitride (e.g., Si₃N₄)for example. An electric charge which contributes to the storage of datais accumulated in a discrete trap of the insulating film 2 b out of thethree insulating films 2 a to 2 c. Therefore, even if there occurs adefect in any part of an oxide film which surrounds an accumulationnode, with consequent occurrence of abnormal leakage, there is no fearof complete removal of the electric charge on the charge storage layer,thus making it possible to improve the reliability of data holding.

The control gate electrode CG is constituted by polycrystalline siliconof a low resistance for example and is formed on the main surface of thesemiconductor substrate 1S via a gate insulating film 3. The gateinsulating film 3 is formed of silicon oxide for example.

The memory gate electrode MG and the control gate electrode CG aredisposed side by side on the main surface of the semiconductor substrate1S with the insulating film 2 for charge storage interposed between theopposed side faces of the electrodes MG and CG. On the other side facesof the memory gate electrode MG and the control gate electrode CG thereare formed side walls 4A (first insulating film (first side wall)) and4B (third insulating film (third side wall)), respectively. For example,the side walls 4A and 4B are formed of silicon oxide.

The memory cell MC has a semiconductor region 5S for source and asemiconductor region 5D of drain. The control gate electrode CG and thememory gate electrode MG are disposed between the semiconductor region5S for source and the semiconductor region 5D for drain.

The semiconductor region 5S for source has an n⁻-type semiconductorregion (first semiconductor region) 5Sm and an n⁺-type semiconductorregion (second semiconductor region) 5Sp. The n⁻-type semiconductorregion 5Sm and the n⁺-type semiconductor region 5Sp are electricallycoupled with each other. The impurity concentration in the n⁻-typesemiconductor region 5Sm is set lower than that in the n⁺-typesemiconductor region 5Sp. The n⁻-type semiconductor region 5Sm is formedself-alignmentwise for a side face of the memory gate electrode MG. Onthe other hand, the n⁺-type semiconductor region 5Sp is formedself-alignmentwise for a side face of the side wall 4A and is positionedaway from the memory gate electrode MG with respect to the n⁻-typesemiconductor region 5Sm.

The semiconductor region 5D for drain has an n⁻-type semiconductorregion (third semiconductor region) 5Dm and an n⁺-type semiconductorregion (fourth semiconductor region) 5Dp. The n⁻-type semiconductorregion 5Dm and the n⁺-type semiconductor region 5Dp are electricallycoupled with each other. The impurity concentration in the n⁻-typesemiconductor region 5Dm is set lower than that in the n⁺-typesemiconductor region 5Dp. The n⁻-type semiconductor region 5Dm is formedself-alignmentwise for a side face of the control gate electrode CG. Onthe other hand, the n⁺-type semiconductor region 5Dp is formedselfalignmentwise for a side face of the side wall 4B and is positionedaway from the control gate electrode CG with respect to the n⁻-typesemiconductor region 5Dm.

Silicide layers 7 m, 7 c, 7 s, and 7 d such as, for example, cobaltsilicide (CoSi₂) layers are formed on upper surfaces of the memory gateMG, the control gate electrode CG, the n⁺-type semiconductor region 5Spfor source, and the n⁺-type semiconductor region 5Dp for drain,respectively, in the memory cell MC constructed as above. The silicidelayers 7 s and 7 d on the upper surfaces of the n⁺-type semiconductorregion 5Sp for source and the n⁺-type semiconductor region 5Dp areformed self-alignmentwise for side faces of the side walls 4A and 4B.

The present inventors have studied a disturb defect (an erroneous writedefect such that a threshold value of a bit in an erased state increasescontrary to intention) which occurs in the memory cell MC of such anon-volatile memory. As a result, the present inventors found out forthe first time that a leakage current produced in the memory cell MC ofthe non-volatile memory contributed markedly to the disturb defect.

As described above, the silicide layer 7 s on the upper surface of then⁺-type semiconductor region 5Sp for source is formed self-alignmentwisefor a side face of the side wall 4A. On the other hand, the n⁺-typesemiconductor region 5Sp for source is also formed self-alignmentwisefor a side face of the side wall 4A. Therefore, the end portion of thesilicide layer 7 s on the memory gate electrode MG side becomes close tothe end portion of the n⁺-type semiconductor region 5Sp on the memorygate electrode MG side. That is, the end, portion of the silicide layer7 s becomes close to the junction surface between the n⁺-typesemiconductor region 5Sp for source and the semiconductor substrate 1S.

Particularly, according to a study made by the present inventors, asshown in FIG. 2, when forming the side wall 4A on a side face of thememory gate electrode MG, the main surface of the source-sidesemiconductor substrate 1S is shaved by depth d1 to form a depression 9.That is, the main surface of the semiconductor substrate 1S on theside-face side of the side walls 4A and 4B is depressed lower than themain surface of the semiconductor substrate 1S on which the memory gateelectrode MG, the control gate electrode CG and the side walls 4A, 4Bare opposed to one another. Consequently, the silicide layer 7 s isformed on a side face and an upper surface of the depression 9. As aresult, the end portion of the silicide layer 7 s on the memory gateelectrode MG side becomes closer to the junction surface between then⁺-type semiconductor region 5Sp for source and the semiconductorsubstrate 1S. There sometimes is a case where a convex portion or thelike is formed on a lower surface of the silicide layer 7 s and reachesthe semiconductor substrate 1S beyond the n⁺-type semiconductor region5Sp. The reason why convex and concave portions are formed on the bottomof the silicide layer 7 s is presumed to be because an impurity or anatural oxide film which remains unremoved in a washing-process prior toformation of the silicide layer is present on the surface of thesemiconductor substrate 1S and there occur thick and thin portions ofthe silicide layer correspondingly to whether such impurity or naturaloxide film is present or not.

Thus, in the memory cell MC of the above configuration, a leakagecurrent IA is apt to flow from an end portion of the silicide layer 7 sformed on the upper surface of the n⁺-type semiconductor region 5Sptoward the semiconductor substrate 1S which underlies the n⁻-typesemiconductor region 5Sm for source.

In the non-volatile memory the sum total of the drain current duringstand-by is smaller one order of magnitude or more than that of thedrain current during stand-by of the ordinary MOSFET (Metal OxideSemiconductor Field Effect Transistor). Or, the source current at thetime of rewriting data of memory is smaller than an allowable current ofa charge pump. Therefore, the memory cell region of the non-volatilememory, the leakage current itself poses no problem.

However, according to a study made by the present inventors, it turnedout that with the leakage current IA flowing from an end portion of thesilicide layer 7 s on the n⁺-type semiconductor region 5Sp for sourcetoward the semiconductor substrate 1S underlying the n⁻-typesemiconductor region 5Sm for source, hot electrons were produced in theportion of the semiconductor substrate 1S just under the insulating film2 for charge storage and were injected into the insulating film 2 forcharge storage, resulting in increase of the threshold value of thememory cell MC. That is, erroneous data are written to the insulatingfilm 2 b for charge storage of the memory cell MC.

As a solution to such a disturb defect there has been proposed a methodwherein an n-type semiconductor region lower in impurity concentrationthan the n⁺-type semiconductor region 5Sp is formed deeper at an endportion of the n⁺-type semiconductor region 5Sp for source. In thiscase, however, there arises the problem of a short channel effect. Asanother solution there has been proposed a method of increasing the gatelength of the memory gate electrode MG. In this case, however, therearises the problem that the erasing speed decreases. As a furthersolution there has been proposed a method of increasing the length ofthe surface of the side wall 4A opposed to the semiconductor substrate1S. In this case, however, there arises the problem of lowering of thecell current.

In connection with the memory cell MC, the following problems also existas problems other than the above disturb defect problems. Such a leakagecurrent as referred to above occurs also in the drain-side n⁺-typesemiconductor region 5Dp. That is, the end portion on the control gateelectrode CG side of the silicide layer 7 d formed on the upper surfaceof the drain-side n⁺-type semiconductor region 5Dp becomes close to theend portion on the control gate electrode CG side of the n⁺-typesemiconductor region 5Dp. Consequently, a leakage current is apt to flowfrom the aforesaid end portion of the silicide layer 7 d toward thesemiconductor substrate 1S which underlies the n⁻-type semiconductorregion 5Dm for drain. On the drain side, since it is away from theinsulating film 2 b for charge storage, the foregoing disturb defectproblems do not occur, but there arises the problem of erroneous readdue to an increase of the leakage current.

In connection with formation of the silicide layer described above, thefollowing problem also exists as a problem other than the above disturbdefect problems. As shown in FIG. 2, an element isolation region 10 isformed on the main surface of the semiconductor substrate 1S. An activeregion is defined by the element isolation region 10 and elements areformed in the active region.

The isolation region 10 is a trench type isolation region called forexample STI (Shallow Trench Isolation) or SGI (Shallow GrooveIsolation). The isolation region 10 is formed by embedding an insulatingfilm 10 s for isolation into an isolation trench 10 t formed on the mainsurface of the semiconductor substrate 1S.

On an upper surface of the insulating film 10 s for isolation there maybe formed a depression 11 in adjacency to the aforesaid active region. Apart of the semiconductor substrate 1S adjacent to a side face of theisolation trench 10 t is exposed from the depression 11. In this state,if a conductor film for silicide formation is deposited, allowing asilicide reaction to take place, the silicide reaction proceeds also inthe portion of the semiconductor substrate 1S adjacent to the side faceof the isolation trench lot exposed from the depression 11. Accordingly,such a silicide layer 7 s as extends in the thickness direction of thesemiconductor substrate 1S along the side face of the isolation trenchlot is formed also in the portion of the semiconductor substrate 1Sexposed from the depression 11. As a result, a leakage current IB flowsin the thickness direction of the semiconductor substrate 1S from thesilicide layer 7 s, thus giving rise to the problem that the leakagecurrent during stand-by increases and so does the current consumption.This problem arises not only on both source and drain sides of thememory cell MC but also in other element portions.

This embodiment solves the above-mentioned problems. A description willbe given below about a concrete example of a semiconductor device havingthe non-volatile memory according to this embodiment.

FIG. 3 is a circuit diagram of the memory cell MC in the non-volatilememory according to this embodiment. The memory cell MC is providedbetween a drain electrode D and a source electrode S with twotransistors, e.g., an n-channel type MISFETQc (hereinafter referred tosimply as “nMISQc for selection”) for memory cell selection and ann-channel typeMISFETQm (simply as “nMISQm for memory” hereinafter) fordata storage.

The nMISQc for selection has a control gate electrode CG, while thenMISQm for memory has a memory gate electrode MG and an insulating film2 (charge storage layer) for charge storage. The write of data isperformed by injecting electrons into the insulating film 2 b for chargestorage from the semiconductor substrate 1S with use of the hot electroninjecting method for example. This method is superior in electroninjection efficiency and permits write at high speed and low current.

Erasing of data is performed, for example, by generating hot holes andinjecting holes into the insulating film 2 b for charge storage. Thus,it is easy to control the write and erase operations and it is possibleto simplify (downsize) a power supply circuit and a peripheralcircuitry.

For read of data, a desired voltage is applied to the memory gateelectrode MG to turn ON the nMISQc for selection in a state in which thepotential of the drain electrode D is made higher than that of thesource electrode S. At this time, the threshold voltage of nMISQmm formemory changes depending on whether electrons are present or not in theinsulating film 2 b for charge storage of the nMISQm and a current flowor does not between the drain electrode D and the source electrode S,whereby data are read.

FIG. 4 is a sectional view showing a basic device configuration of thememory cell MC and FIGS. 5 and 6 each show an example of an enlargedsectional view of a principal portion of the memory cell MC shown inFIG. 4. Since a basic configuration is the same as that described abovein connection with FIGS. 1 and 2, explanations of the same portions willbe omitted.

In this embodiment, on side faces of the side walls 4A and 4B there areformed side walls (a second insulating film (second side wall) and afourth insulating film (fourth side wall)) 12A and 12B, the side walls12A and 12B being formed of the same silicon oxide as that of the sidewalls 4A and 4B for example. That is, the side faces of the side walls4A and 4B are covered with the side walls 12A and 12B, respectively.

As shown in FIGS. 5 and 6, depressions 9 are formed in the semiconductorsubstrate 1S at positions outside the memory gate electrode MG, controlgate electrode CG and side walls 4A, 4B. Therefore, the main surface ofthe semiconductor substrate 1S where the side walls 12A and 12B areopposed to each other is depressed lower than the main surface of thesemiconductor substrate 1S where the memory gate electrode MG, controlgate electrode CG and side walls 4A, 4B are opposed to one another.Lower end portions of the side walls 12A and 12B cover the edges ofcontact interfaces between the side walls 4A, 4B and the semiconductorsubstrate 1S and also cover side faces of the semiconductor substrate 1Sexposed from the depressions 9 on the main surface of the semiconductorsubstrate.

Further, the lower end portions of the side walls 12A and 12B cover themain surface portions (upper surfaces of the depressions 9) of thesemiconductor substrate 1S on both source and drain sides by amountscorresponding to the thicknesses (lengths d2 and d3 in FIG. 5) of theside walls 12A and 12B from side faces of the side walls 4A and 4B. Thethicknesses (lengths d2 and d3 in FIG. 5) of the side walls 12A and 12Bindicate the widths in the gate length direction of the lower ends ofthe side walls 12A and 12B.

In this embodiment, on the upper surface of the n⁺-type semiconductorregion 5Sp for source in the memory cell MC there is formed a silicidelayer (first silicide layer) 7 s whose end portion on the memory gateelectrode MG side is defined by the side wall 12A. That is, the silicidelayer 7 s on the source side is formed self-alignmentwise for the sidewall 12A. Therefore, the end portion on the memory gate electrode MGside of the source-side silicide layer 7 s is spaced approximately adistance corresponding to the thickness (length d2 in FIG. 5) of theside wall 12 away from a junction surface (junction end) between then⁻-type semiconductor region 5Sm for source and the n⁺-typesemiconductor region 5Sp for source or from the junction surface(junction end) between the n⁺-type semiconductor region 5Sp for sourceon the memory gate electrode MG side and the semiconductor substrate 1S.

As a result, even if the main surface of the source-side semiconductorsubstrate 1S is somewhat depressed or a convex portion is formed on thelower surface of the silicide layer 7 s, an end portion of the silicidelayer 7 s and the convex portion are spaced away from the junctionsurface (junction end) between the n⁻-type semiconductor region 5Sm forsource and the n⁺-type semiconductor region 5Sp for source.Consequently, even if the foregoing convex portion is formed on thelower surface of the silicide layer 7 s, the convex portion is difficultto project to the outside of the n⁺-type semiconductor region 5Sp.

In this way the leakage current IA flowing from the end portion of thesilicide layer 7 s toward the semiconductor substrate 1S which underliesthe n⁻-type semiconductor region 5Sm for source can be diminished orextinguished and hence it is possible to suppress or prevent theforegoing disturb defect caused by the leakage current IA. Consequently,it is possible to improve the reliability of operation of thesemiconductor device having the non-volatile memory.

In this embodiment it is not that the n-type semiconductor region of alower impurity concentration than the n⁺-type semiconductor region 5Spis formed at an end of the semiconductor region 5Sp as an anti-disturbdefect measure, and therefore the problem of a short channel effect doesnot occur. Besides, since it is not that the surface of the side wall 4Aopposed to the semiconductor substrate 1S is made longer as ananti-disturb measure, a lowering of the cell current does not occur,either.

In this embodiment, moreover, on the upper surface of the n⁺-typesemiconductor region 5Dp for drain in the memory cell MC there is formeda silicide layer (second silicide layer) 7 d whose end portion on thecontrol gate electrode CG is defined by the side wall 12B. That is, thedrain-side silicide layer 7 d is formed self-alignmentwise for the sidewall 12B. Therefore, the end portion on the control gate electrode CGside of the drain-side silicide layer 7 d is spaced a distancecorresponding to the thickness (length d3 in FIG. 5) of the side wall12B away from a junction surface (junction end) between the n⁻-typesemiconductor region 5Dm for drain and the n⁺-type semiconductor region5Dp for drain or from a junction surface (junction end) between then⁺-type semiconductor region 5Dp for drain and the semiconductorsubstrate 1S.

As a result, even if the main surface of the drain-side semiconductorsubstrate 1S is depressed or a convex portion is formed on a lowersurface of the silicide layer 7 d, an end portion of the silicide layer7 d and the foregoing convex portion are spaced away from the unctionsurface (junction end) between the n⁻-type semiconductor region 5Dm fordrain and the n⁺-type semiconductor region 5Dp for drain or from thejunction surface (junction end) between the n⁺-type semiconductor region5Sp for drain on the control gate electrode CG side and thesemiconductor substrate 1S. Therefore, even if a convex portion isformed on the lower surface of the silicide layer 7 d, the convexportion is difficult to project to the outside of the n⁺-typesemiconductor region 5Dp.

Consequently, the leakage current flowing from the end portion of thesilicide layer 7 d toward the semiconductor region 1S which underliesthe n⁻-type semiconductor region 5Dm for drain can be diminished orextinguished, whereby it is possible to avoid the problem of erroneousread in the semiconductor device having the non-volatile memory.

In this embodiment, as shown in FIG. 6, on the upper surface of theisolation region 10 there is formed a side wall (insulating film) 12C soas to cover the side face of the semiconductor region 1S (silicide layer7 s, 7 d) exposed from the depression 11 which is formed in adjacency toan active region. For example, the side wall 12C is formed of siliconoxide like the side walls 12A and 12B.

With the side wall 12C, it is possible to suppress or prevent thesilicide layer 7 s (7 d) from being extended in the thickness directionof the semiconductor substrate 1S along the side face of the isolationtrench 10 t in the portion of the semiconductor substrate 1S adjacent tothe depression of the isolation region 10. Consequently, it is possibleto diminish the leakage current flowing in the thickness direction ofthe semiconductor substrate 1S from the silicide layers 7 s and 7 d.That is, since the leakage current during stand-by of the semiconductordevice having the non-volatile memory can be decreased, it is possibleto diminish the power consumption.

FIG. 7 shows the distribution of a threshold voltage Vth in asemiconductor chip in a comparative manner between before taking ananti-disturb defect measure and after taking the same measure.

The left side of FIG. 7 shows the state before taking the anti-disturbdefect measure. The thickness at the time of deposition of an insulatingfilm for forming the side walls 12A and 12B to be described later isabout 60 nm for example. But in the memory cell MC, the insulating filmis all removed and the side walls 12A and 12B are not formed. It is seenthat in this case, as compared with the initial stage (just aftererase), the threshold voltage Vth is largely shifted to the right due todisturb.

On the other hand, the right side of FIG. 7 shows the state after takingthe anti-disturb defect measure. The side walls 12A and 12B are formedin the memory cell MC. It is seen that in this case the amount of shiftof the threshold value Vth relative to the initial (just after erase)value is small in comparison with that in the state before taking theanti-disturb defect measure shown on the left side of FIG. 7. In thiscase, the thickness of the insulating film for forming the side walls12A and 12B to be described later is about 100 nm for example, but bymachining for forming the side walls the thickness (length d2, d3) ofeach of the side walls 12A and 12B is 10 to 80 nm for example. Accordingto a study made by the present inventors, the thickness (length d2, d3)of each of the side walls 12A and 12B is required to be 10 nm or more,preferably 10 to 50 nm, for example.

Now, with reference to FIGS. 8 to 25, a description will be given aboutan example of a method for manufacturing the semiconductor device havingthe non-volatile memory according to this embodiment. FIGS. 8 to 25 aresectional views of principal portions during manufacture of thesemiconductor device according to this embodiment. In those figures, thereference mark M denotes a memory region, P denotes a peripheral circuitregion, RA and RB denote resistor regions. Although the memory region M,peripheral circuit region P and resistor regions RA, RB are shown in aseparate manner, these are formed on one and same semiconductorsubstrate 1S.

First, as shown in FIG. 8, there is provided a semiconductor substrate1S (here it is a thin semiconductor sheet of a generally circular shapein plan called a semiconductor wafer) having a main surface (first mainsurface, device-forming surface) and a back surface (second mainsurface), the main surface and the back surface being positioned onopposite sides in the thickness direction.

Subsequently, an isolation region 10 which defines an active region isformed on the main surface of the semiconductor substrate 1S. Theisolation region 10 is formed by forming an isolation trench 10 t on themain surface of the semiconductor substrate 1S and then embedding aninsulating film los for isolation into the isolation trench lot, theinsulating film los being formed of silicon oxide for example.

Thereafter, an n-type buried well DNWL is formed in a memory region M.Then, a p-type well PWL is formed in the memory region M and theperipheral circuit region P. At this time, a resistor RWL is formed inthe resistor region RA, the resistor RWL being formed by a p-typesemiconductor region.

Next, a gate insulating film 3 of silicon oxide for example is formed onan active region of the main surface of the semiconductor substrate 1S,then a conductor film of low resistance polycrystalline silicon forexample is deposited on the main surface of the semiconductor substrate1S, and a cap insulating film of silicon oxide is deposited thereon.

Subsequently, a photoresist pattern is formed on the cap insulating filmand, with the photoresist film as an etching mask, the cap insulatingfilm exposed therefrom is etched to effect patterning of the capinsulating film, followed by removal of the photoresist pattern.

Thereafter, with the pattern of the remaining cap insulating film as anetching mask, the underlying conductor film exposed therefrom is etchedto form a control gate electrode CG in the memory region M, a gateelectrode FG in the peripheral circuit region P and a resistor RG in theresistor region RB. Then, the cap insulating film is removed.

Subsequently, as shown in FIG. 9, an insulating film 2 for chargestorage and a memory gate electrode MG are formed in the portion of thememory region M adjacent to the control gate electrode CG. Here this isdone in the following manner for example.

First, an insulating film 2 a of silicon oxide for example is depositedon the main surface of the semiconductor substrate 1S shown in FIG. 8 soas to also cover the surfaces of the control gate electrode CG, gateelectrode FG and resistor RG. Thereafter, an insulating film 2 b ofsilicon nitride for example is deposited on the insulating film 2 a bychemical vapor deposition (CVD).

Subsequently, an insulating film 2 c of silicon oxide for example isdeposited on the insulating film 2 b by a thermal oxidation method forexample and then a conductor film of low resistance polycrystallinesilicon for example is deposited thereon by CVD for example. Thereafter,the conductor film is etched by an etch back method for example,allowing the conductor film to remain on both side faces of the controlgate electrode CG, gate electrode FG and resistor RG.

Next, there is formed such a photoresist pattern as covers the conductorfilm on one side face of the control electrode CG and permits the otherfilm portion to be exposed and, with the photoresist pattern as anetching mask, the exposed conductor film is removed by etching, followedby removal of the photoresist pattern.

Subsequently, the insulating film 2 present on surfaces (upper surfaceand one side face) of the control gate electrode CG, surfaces (uppersurface and both side faces) of the gate electrode FG, surfaces (uppersurface and both side faces) of the resistor RG and the main surface ofthe semiconductor substrate 1S is removed.

In this way, in the memory region M, a memory gate electrode MG isformed via the insulating film 2 for charge storage on the main surfaceof the semiconductor substrate 1S in adjacency to the control gateelectrode CG. The insulating film 2 is interposed on opposed side facesof the control gate electrode CG and the memory gate electrode MG toinsulate the electrodes CG and MG from each other.

Next, as shown in FIG. 10, in the memory region M, an n⁻-typesemiconductor region 5Sm for source and an n⁻-type semiconductor region5Dm for drain are formed on the main surface of the semiconductorsubstrate 1S. Further, in the peripheral circuit region P, n⁻-typesemiconductor regions 15 a for source and drain are formed on the mainsurface of the semiconductor substrate 1S. For example, this is done inthe following manner.

The n⁻-type semiconductor region 5Sm for source in the memory region Mis formed by forming such a photoresist pattern as allows the sourceregion and the memory gate electrode MG in the memory region M to beexposed onto the main surface of the semiconductor substrate 1S andcovers the other portion and thereafter introducing an n-type impuritysuch as for example phosphorus (P) or arsenic (As) into thesemiconductor substrate 1S by ion implantation for example. That is, then⁻-type semiconductor region 5Sm for source is formed self-alignmentwisefor a side face of the memory gate electrode MG.

The n⁻-type semiconductor region 5Dm for drain in the memory region M isformed by forming such a photoresist pattern as allows the drain regionand the control gate electrode CG in the memory region M to be exposedonto the main surface of the semiconductor substrate 1S and covers theother portion and thereafter introducing an n-type impurity such as forexample phosphorus or arsenic into the semiconductor substrate 1S by ionimplantation for example. That is, the n⁻-type semiconductor region 5Dmfor drain is formed self-alignmentwirse for a side face of the controlgate electrode CG.

The n⁻-type semiconductor regions 15 a for source and drain are formedby forming such a photoresist pattern as allows the source and drainregions in the peripheral circuit region P to be exposed on the mainsurface of the semiconductor substrate 1S and covers the other portionand thereafter introducing an n-type impurity such as for examplephosphorus or arsenic into the semiconductor substrate 1S by ionimplantation for example. That is, the n⁻-type semiconductor regions 15a for source and drain are formed self-alignmentwise for side faces ofthe gate electrode FG.

Next, an insulating film of silicon oxide for example is deposited ontothe main surface of the semiconductor substrate 1S by CVD for exampleand is thereafter etched back to form side walls 4A, 4B, 4C, 4D, 4E and4F of that insulating film on side faces of the memory gate electrodeMG, control gate electrode CG, gate electrode FG and resistor RG, asshown in FIG. 11.

FIGS. 12 to 14 are enlarged sectional views of the memory region M,peripheral circuit region P and resistor region RA, respectively, shownin FIG. 11.

As shown in FIGS. 12 and 13, the main surface of the semiconductorsubstrate 1S in the region other than the region where the control gateelectrode CG, memory gate electrode MG, gate electrode FG and side walls4A to 4D formed on their side faces are disposed is etched. As a resultsdepressions 9 are formed on the main surface of the semiconductorsubstrate 1S in the region other than the disposed region of the controlgate electrode CG, memory gate electrode MG, gate electrode FG and sidewalls 4A to 4D formed on their side faces.

As shown in FIGS. 13 and 14, during manufacture of the semiconductordevice, the upper surface of the insulating film los for isolation inthe isolation region 10 is etched at its portions adjacent to the activeregion, whereby depressions 11 are formed in the portions of the uppersurface of the insulating film los for isolation in the isolation region10 adjacent to the active region.

Next, as shown in FIG. 15, in the memory region M, an n⁺-typesemiconductor region 5Sp for source and an n⁺-type semiconductor region5Dp for drain are formed on the main surface of the semiconductorsubstrate 1S. Further, in the peripheral circuit region P, n⁺-typesemiconductor regions 15 b for source and drain are formed on the mainsurface of the semiconductor substrate 1S. For example, this is done inthe following manner.

The n⁺-type semiconductor region 5Sp for source in the memory region Mis formed by forming such a photoresist pattern as allows the sourceregion and side wall 4A in the memory region M to be exposed onto themain surface of the semiconductor substrate 1S and closes the otherportion and thereafter introducing an n-type impurity such as forexample phosphorus or arsenic into the semiconductor substrate 1S by ionimplantation for example. That is, the n⁺-type semiconductor region 5Spfor source is formed self-alignmentwise for a side face of the side wall4A, whereby a semiconductor region 5S for source of the memory cell MCis formed in the memory region M.

The n⁺-type semiconductor region 5Dp for drain in the memory region M isformed by forming such a photoresist pattern as allows the drain regionand side wall 4B in the memory region M to be exposed onto the mainsurface of the semiconductor substrate 1S and covers the other portionand thereafter introducing an n-type impurity such as for examplephosphorus or arsenic into the semiconductor substrate 1S by ionimplantation for example. That is, the n⁺-type semiconductor region 5Dpfor drain is formed self-alignmentwise for a side face of the side wall4B, whereby a semiconductor region 5D for strain of the memory cell MCis formed in the memory region M.

The n⁺-type semiconductor regions 15 b for source and drain in theperipheral circuit region P are formed by forming such a photoresistpattern as allows the source region, drain region, gate electrode FG andside walls 4C, 4D in the peripheral circuit region P to be exposed ontothe main surface of the semiconductor substrate 1S and thereafterintroducing an n-type impurity such as for example phosphorus or arsenicinto the semiconductor substrate 1S by ion implantation for example.That is, the n⁺-type semiconductor regions 15 b for source and drain areformed self-alignmentwise for side faces of the side walls 4C and 4D,whereby semiconductor regions 15 for source and drain of an n-channelMISFETQn for forming a peripheral circuitry are formed in the peripheralcircuit region P.

Next, as shown in FIG. 16, an insulating film 12 is deposited on themain surface of the semiconductor substrate 1S so as to also cover thesurfaces of the control gate electrode CG, memory gate electrode MG,gate electrode FG, resistor RG and side walls 4A to 4F by CVD Theinsulating film 12 serves as a mask for inhibiting a silicide reactionin a silicide layer forming process to be described later and is formedof silicon oxide for example.

Subsequently, a photoresist pattern 19 is formed by the photolithographytechnique in the region where the insulating film 12 is to be retainedand then, with the photoresist pattern 19 as an etching mask, theinsulating film 12 is etched by anisotropic dry etching. Thereafter, thephotoresist pattern 19 is removed.

In this way, as shown in FIG. 17, there are formed patterns ofinsulating films 12D and 12E which serve as masks for inhibiting thereaction of a silicide layer in a silicide layer forming process to bedescribed later. The insulating films 12D and 12E are formed so as tocover resistance value-forming regions of the resistors RWL and RG andallow electrode-forming regions to be exposed.

In this embodiment, during formation of the insulating regions 12D and12E; side walls 12A and 12B are formed on side faces of the side walls4A and 4B in the memory region M. At the same time, in the peripheralcircuit region P, side walls 12F and 12G are formed on side faces of theside walls 4C and 4D. Also at the same time, in the resistor region RB,side walls 12H and 12J are formed on side faces of the side walls 4E and4F. Further, at the same time, side walls 12C are formed on side facesof the depressions 12 formed on the upper surface of the isolationregion 10.

Thus, in this embodiment, since the side walls 12A, 12B, 12C, 12F and12G are formed in the same process as the process of forming thepatterns of the insulating films 12D and 12E which serve as masks in thesilicide layer forming process, the number of semiconductor devicemanufacturing steps does not increase despite the new addition(formation) of the side walls 12A, 12B, 12C, 12F and 12G.

In this connection, reference is here made to FIGS. 18 to 20 which areenlarged sectional views of the memory region M, peripheral circuitregion P and resistor region RA, respectively, shown in FIG. 17.

As shown in FIG. 18, the side walls 12A and 12B of the memory region Mare formed so as to cover side faces of the side walls 4A and 4B. Lowerend portions of the side walls 12A and 12B cover not only the edges ofcontact interfaces between the side walls 4A, 4B and the semiconductorsubstrate 1S but also the side faces of the semiconductor substrate 1Sexposed from the depressions 9 of the semiconductor substrate on thesource and drain sides.

Further, the lower end portions of the side walls 12A and 12B cover themain surface portions (upper surfaces of the depressions 9) of thesemiconductor substrate 1S on the source and drain sides by an amountcorresponding to the thickness of each of the side walls 12A and 12Bfrom side faces of the side walls 4A and 4B. The end portions on thememory gate electrode MG and control gate electrode CG sides of then⁺-type semiconductor regions 5Sp and 5Dp for source and drain somewhatget in up to below the side walls 4A and 4B beyond the portions whichunderlie the side walls 12A and 12B.

As shown in FIG. 19, the side walls 12F and 12G in the peripheralcircuit region P are formed so as to cover side faces of the side walls4C and 4D. Lower end portions of the side walls 12F and 12G cover notonly the edges of contact interfaces between the side walls 4C, 4D andthe semiconductor substrate 1S but also the side faces of thesemiconductor substrate 1S exposed from the depressions 9 of thesemiconductor substrate on the source and drain sides.

Moreover, the lower end portions of the side walls 12F and 12G cover themain surface portions (upper surfaces of the depressions 9) of thesemiconductor substrate 1S on the source and drain sides by an amountcorresponding to the thickness of each of the side walls 12F and 12Gfrom the side faces of side walls 4C and 4D. The end portions on thegate electrode FG side of the n⁺-type semiconductor regions 15 b forsource and drain somewhat get in up to below the side walls 4C and 4Dbeyond the portions which underlie the side walls 12F and 12G.

A side wall 12C is formed also on a side face of each depression 11formed on an upper surface of the insulating film 10 s for isolation inthe isolation region 10. The side wall 12C is formed by etching theinsulating film 12 so as to cover the side face of the semiconductorsubstrate 1S exposed from the depression 11.

Next, the main surface of the semiconductor substrate 1S is, washedusing a fluoric acid-based washing solution and a metallic film, e.g., afilm of cobalt (Co), is deposited on the main surface of thesemiconductor substrate 1S by for example sputtering so as to cover thesurfaces of the control gate electrode CG, memory gate electrode MG,gate electrode FG, resistors RWL, RG, side walls 4A to 4F, 12A to 12C,12F, 12G, 12H, 12J and insulating films 12D, 12E.

This metallic film is in contact not only with the n⁺-type semiconductorregions 5Sp, 5Dp and 15 b of the semiconductor substrate 1S but alsowith upper surfaces of the control gate electrode CG, memory gateelectrode MG and gate electrode FG and the electrode-forming regions ofthe resistors RWL and RG. However, as described earlier, the abovemetallic film is not in contact with side faces of the depressions 9 ofthe semiconductor substrate 1S formed on both sides of the control gateelectrode CG and the memory gate electrode MG (both sides of the sidewalls 4A and 4B) because the side walls 4A and 4B are formed on thoseside faces respectively. The metallic film in question is not in contactwith the side faces of the semiconductor substrate 1S, either, exposedfrom the depressions 11 formed on the upper surfaces of the isolationregions 10.

Subsequently, a heat treatment involving the conditions of, for example,a temperature of 400° to 550° C. and a duration of about one minute isapplied to the semiconductor substrate 1S and the above metallic film,thereby inducing a silicidation reaction at the portions where the abovemetallic film is in contact with the semiconductor substrate 1S (then⁺-type semiconductor regions 5Sp, 5Dp, 15 b and the resistor RWL), gateelectrode CG, memory gate electrode MG, gate electrode FG and resistorRG.

Thereafter, the metallic film which remains unreacted is removed byetching, thereby allowing a silicide layer 7 to remain on the uppersurfaces of the semiconductor substrate 1S (the n⁺-type semiconductorregions 5Sp, 5Dp, 15 b and the resistor RWL), control gate electrode CG,memory gate electrode MG, gate electrode FG and resistor RG, thesilicide layer 7 comprising cobalt silicide (CoSi₂) for example, asshown in FIG. 21. Then, a heat treatment involving the conditions of,for example, a temperature of 700° to 800° C. and a duration of aboutone minute is applied to the semiconductor substrate 1S and the silicidelayer 7 to make the silicide layer 7 low in resistance.

FIGS. 22 to 24 are enlarged sectional views of the memory region M,peripheral circuit region P and resistor region RA, respectively, shownin FIG. 21.

In this embodiment, a source-side silicide layer 7 (7 s) is formed usingthe side wall 12A as a mask. That is, the silicide layer 7 s is formedself-alignmentwise for the side wall 12A. Therefore, as shown in FIG.22, the end portion on the memory gate electrode MG side of the silicidelayer 7 s is formed at a position spaced a distance corresponding to thethickness of the side wall 12A away from a side face of the side wall4A. Thus, a spacing corresponding approximately to the thickness of theside wall 12A can be ensured between the end portion on the memory gateelectrode MG side of the silicide layer 7 s and the junction surface(junction end) between the n⁻-type semiconductor region 5Sm for sourceand the n⁺-type semiconductor region 5Sp for source or the junctionsurface (junction end) between the n⁺-type semiconductor region 5Sp forsource on the memory gate electrode MG side and the semiconductorsubstrate 1S.

As a result, even if the main surface of the semiconductor substrate 1Son the source side is somewhat depressed or even if a convex portion isformed on a lower surface of the silicide layer 7 s, the foregoing endportion of the silicide layer 7 s and the convex portion are spaced awayfrom the junction surface (junction end) between the n-typesemiconductor region 5Sm for source and the n⁺-type semiconductor region5Sp for source or the junction surface (junction end) between then⁺-type semiconductor region 5Sp for source and the semiconductor region1S. Therefore, even if the aforesaid convex portion is formed on thelower surface of the silicide layer 7 s, the convex portion is difficultto project to the outside of the n⁺-type semiconductor region 5Sp.

Consequently, it is possible to diminish or extinguish the leakagecurrent IA flowing from the end portion of the silicide layer 7 s towardthe semiconductor substrate 1S which underlies the n⁻-type semiconductorregion 5Sm for source and hence possible to suppress or prevent theforegoing disturb defect caused by the leakage current IA. As a result,it is possible to improve the reliability of operation of thesemiconductor device having the non-volatile memory.

In this embodiment, a drain-side silicide layer 7 (7 d) is formed usingthe side wall 12B as a mask. That is, the silicide layer 7 d is formedself-alignmentwise for the side wall 12B. Therefore, as shown in FIG.22, the end portion on the control gate electrode CG side of thedrain-side silicide layer 7 (7 d) is formed at a position spaced adistance corresponding to the thickness of the side wall 12B from a sideface of the side wall 4B. That is, a spacing corresponding approximatelyto the thickness of the side wall 12B is ensured between the end portionon the control gate electrode CG side of the silicide layer 7 (7 d) andthe junction surface (junction end) between the n⁻-type semiconductorregion 5Dm for drain and the n⁺-type semiconductor region 5Dp for drainor the junction surface (junction end) between the n⁺-type semiconductorregion 5Dp for drain on the control gate electrode CG side and thesemiconductor substrate 1S.

As a result, even if the main surface of the drain-side semiconductorsubstrate 1S is somewhat depressed or even if a convex portion is formedon a lower surface of the silicide layer 7 d, the foregoing end portionof the silicide layer 7 d and the convex portion are spaced away fromthe junction surface (junction end) between the n⁻-type semiconductorregion 5Dm for drain and the n⁺-type semiconductor region 5Dp for drainor the junction surface (junction end) between the n⁺-type semiconductorregion 5Dp for drain on the control gate electrode CG side and thesemiconductor region 1S. Therefore, even if the convex portion is formedon the lower surface of the silicide layer 7 d, the convex portion isdifficult to project to the outside of the n⁺-type semiconductor region5Dp.

Consequently, it is possible to diminish or extinguish the leakagecurrent flowing from the end portion of the silicide layer 7 d towardthe semiconductor substrate 1S which underlies the n⁻-type semiconductorregion 5Dm for drain and hence possible to suppress or prevent theforegoing erroneous read defect caused by the leakage current. As aresult, it is possible to improve the reliability of operation of thesemiconductor device having the non-volatile memory.

In this embodiment, the silicide layers 7 are formed for source anddrain of MISFETQn in the peripheral circuit region P, using the sidewalls 12F and 12G as masks. That is, the silicide layers 7 for sourceand drain of MISFETQn are formed self-alignmentwise for the side walls12F and 12G. Therefore, as shown in FIG. 23, the end portions on thegate electrode FG side of the silicide layers 7 for source and drain areformed at positions spaced a distance corresponding to the thickness ofeach of the side walls 12F and 12G from side faces of the side walls 4Cand 4D. That is, a spacing corresponding approximately to the thicknessof each of the side walls 12F and 12G can be ensured between the endportion on the gate electrode FG side of each silicide layer 7 and thejunction surface (junction end) between the n⁻-type semiconductor region15 a for drain or the n⁺-type semiconductor region 15 b for drain or thejunction surface (junction end) between the n⁺-type semiconductor region15 b on the gate electrode FG side and the semiconductor substrate 1S.

As a result, even if the main surface portions of the semiconductorsubstrate 1S on the source and drain sides are somewhat depressed oreven if a convex portion is formed on the lower surface of each silicidelayer 7, the foregoing upper end portion of the silicide layer 7 and theconvex portion are spaced away from the junction surface (junction end)between the n⁻-type semiconductor region 15 a for drain and the n⁺-typesemiconductor region 15 b for drain or the junction surface (junctionend) between the n⁺-type semiconductor region 15 b for drain on the gateelectrode FG side and the semiconductor substrate 1S. Therefore, even ifthe convex portion is formed on the lower surface of the silicide layer7 in MISFETQn, the convex portion is difficult to project to the outsideof the n⁺-type semiconductor region 15 b.

Thus, in MISFETQn in the peripheral circuit region P, it is possible todiminish or extinguish the leakage current flowing from the end portionof the silicide layer 7 toward the semiconductor substrate 1S whichunder lies the n⁻-type semiconductor region 15 a for drain. Therefore,the leakage current during stand-by of the semiconductor device can bediminished and so can be the power consumption of the semiconductordevice having the volatile memory.

In this embodiment, moreover, as shown in FIG. 24, since the side wall12C is formed on the side face of the semiconductor substrate 1S exposedfrom the depression 11 on the upper surface of each isolation region 10,a silicidation reaction from the side face can be suppressed orprevented.

Consequently, in the portion of the semiconductor substrate 1S adjacentto the depression 11 in the isolation region 10, the silicide layer 7can be suppressed or prevented from being extended in the thicknessdirection of the semiconductor substrate 1S along a side face of theisolation trench lot. As a result, it is possible to diminish theleakage current flowing in the thickness direction of the semiconductorsubstrate 1S from the silicide layer 7. That is, since the leakagecurrent during stand-by of the semiconductor device having thenon-volatile memory can be diminished, it is possible to diminish thepower consumption.

Next, as shown in FIG. 25, an insulating film 20 of silicon oxide forexample is deposited on the main surface of the semiconductor substrate1S by example CVD and subsequently there are formed contact holes 21 towhich the upper surface of the silicide layer 7 is partially exposed.

Then, a barrier metal film of titanium nitride for example is depositedonto the insulating film 20 for example by both sputtering and CVD,thereafter, a main wiring metal film of tungsten for example isdeposited onto the barrier metal film by for example CVD and these metalfilms are buried into the contact holes 21.

Thereafter, the metal films on the insulating film 20 are removed bychemical mechanical polishing (CMP) to form plugs 22 within the contactholes 21 respectively. Lower ends of the plugs 22 are in contact withand electrically coupled to the silicide layers 7.

The manufacture of the semiconductor device having the non-volatilememory is completed through subsequent, conventional wiring process,inspection process and assembling process.

Although the present invention has been described above by way of anembodiment thereof, it goes without saying that the present invention isnot limited to the above embodiment, but that various changes may bemade within the scope not departing from the gist of the invention.

For example, the insulating film for charge storage in the non-volatilememory is not limited to the silicon nitride film, but various changesmay be made. For example, such a material or configuration as permitsformation of an insulating trap level like alumina (Al₂O₃) may be used.

The present invention is applicable to the manufacturing industry formanufacturing semiconductor devices having a non-volatile memory.

1. A semiconductor device comprising a plurality of non-volatile memorycells over a main surface of a semiconductor substrate, each of thenon-volatile memory cells comprising: an insulating film for chargestorage formed over the semiconductor substrate; a first gate electrodeformed over the insulating film for charge storage and having first andsecond side faces, the first and second side faces being positioned onmutually opposite sides along the main surface of the semiconductorsubstrate; a first insulating film formed over the first side face ofthe first gate electrode; a second insulating film formed over a sideface of the first insulating film; a first semiconductor region formedover the main surface of the semiconductor substrate self-alignmentwisefor the first side face of the first gate electrode; a secondsemiconductor region formed over the main surface of the semiconductorsubstrate self-alignmentwise for a side face of the first insulatingfilm so as to be electrically coupled to the first semiconductor region;and a first silicide layer formed over the second semiconductor regionself-alignmentwise for a side face of the second insulating film, an endportion on the first gate electrode side of the first silicide layerbeing formed by the second insulating film at a position spaced awayfrom a junction end between the first semiconductor region and thesecond semiconductor region.
 2. A semiconductor device according toclaim 1, wherein an active region defined by an isolation region isformed over the main surface of the semiconductor substrate, wherein theisolation region is formed by burying an insulating film for isolationinto a trench formed in the main surface of the semiconductor substrate,wherein such a depression as allows a part of the semiconductorsubstrate present over a side face of the trench to be exposed is formedover an upper surface of the insulating film for isolation in adjacencyto the active region, and wherein an insulating film is formed in thedepression so as to cover a part of the semiconductor substrate presentover the side face of the trench and exposed from the depression.
 3. Asemiconductor device according to claim 1, wherein each of thenon-volatile memory cells further comprises: a gate insulating filmformed over the main surface of the semiconductor substrate; a secondgate electrode having a third side face and a fourth side face, thethird side face being opposed to the second side face of the first gateelectrode and provided over the gate insulating film at a positionadjacent through the insulating film for charge storage to the secondside face of the first gate, the fourth side face being positionedopposite to third side face along the main surface of the semiconductorsubstrate; a third insulating film formed over the fourth side face ofthe second gate electrode; a fourth insulating film formed over a sideface of the third insulating film; a third semiconductor region formedover the main surface of the semiconductor substrate self-alignmentwisefor the fourth side face of the second gate; a fourth semiconductorregion formed over the main surface of the semiconductor substrateself-alignmentwise for a side face of the third insulating film so as tobe electrically coupled to the third semiconductor region; and a secondsilicide layer formed over the fourth semiconductor regionself-alignmentwise for a side face of the fourth insulating film, an endportion on the second gate electrode side of the second silicide layerbeing formed by the fourth insulating film at a position spaced awayfrom a junction end between the third semiconductor region and thefourth semiconductor region.
 4. A semiconductor device according toclaim 1, wherein main surface of the semiconductor substrate with thesecond insulating film opposed thereto is depressed deeper than the mainsurface of the semiconductor substrate with the first gate electrodeopposed thereto.
 5. A semiconductor device according to claim 1, whereinthe thickness of the second insulating film is in the range of 10 to 80nm.
 6. A method of manufacturing a semiconductor device, comprising thesteps of: (a) forming over a main surface of a semiconductor substratean isolation region and an active region defined by the isolationregion; (b) forming over the main surface of the semiconductor substratean insulating film for charge storage of a non-volatile memory cell; (c)forming over the insulating film for charge storage a first gateelectrode having a first side face and a second side face, the first andsecond side faces being positioned on mutually opposite sides along themain surface of the semiconductor substrate; (d) forming over the mainsurface of the semiconductor substrate a first semiconductor regionself-alignmentwise for the first side face of the first gate electrode;(e) after the step (d), forming a first insulating film over the firstside face of the first gate electrode; (f) after the step (e), formingover the main surface of the semiconductor substrate a secondsemiconductor region self-alignmentwise for a side face of the firstinsulating film so as to be electrically coupled to the firstsemiconductor region; (g) after the step (f), forming a secondinsulating film over the side face of the first insulating film; and (h)after the step (g), forming a first silicide layer over the secondsemiconductor region, the first silicide layer being formedself-alignmentwise for a side face of the second insulating film.
 7. Amethod according to claim 6, wherein the second insulating film isformed in the same step as the step of forming a pattern of aninsulating film which covers a silicide layer-free region over the mainsurface of the semiconductor substrate.
 8. A method according to claim6, wherein the step of forming the isolation region includes the stepsof: forming a trench in the main surface of the semiconductor substrate;and burying an insulating film for isolation into the trench, andwherein the step (g) includes a step of: forming an insulating film in adepression formed in the portion adjacent to the active region over anupper surface of the insulating film for isolation in the main surfaceof the semiconductor substrate so as to cover a part of thesemiconductor substrate over a side face of the trench exposed from thedepression.
 9. A method according to claim 6, further comprising, beforethe step (b), the steps of: forming a gate insulating film in a formingregion of the nonvolatile memory cell over the main surface of thesemiconductor substrate; and forming a second gate electrode over thegate insulating film and at a position adjacent to the second side faceof the first gate electrode through the insulating film for chargestorage, the second gate having a third side face opposed to the secondside face of the first gate electrode and a fourth side face positionedopposite to the third side face along the main surface of thesemiconductor substrate, wherein, in the step (d) of forming the firstsemiconductor region, a third semiconductor region is formed over themain surface of the semiconductor substrate self-alignmentwise for thefourth side face of the second gate electrode, wherein, in the step (e)of forming the first insulating film there is formed a third insulatingfilm over the fourth side face of the second gate electrode, wherein, inthe step (f) of forming the second semiconductor region there is formeda fourth semiconductor region over the main surface of the semiconductorsubstrate self-alignmentwise for a side face of the third insulatingfilm so as to be electrically coupled to the third semiconductor region,wherein, in the step (g) of forming the second insulating film there isformed a fourth insulating film over the side face of the thirdinsulating film, and wherein, in the step (h) of forming the firstsilicide layer there is formed a second silicide layer over the fourthsemiconductor region self-alignmentwise for a side face of the fourthinsulating film.
 10. A method according to claim 6, wherein thethickness of the second insulating film is in the range of 10 to 80 nm.